Dry etching device

Abstract

Abstract PURPOSE:To make it possible to clearly give a determination on the endpoint of etching by a method wherein a light source, a spectroscope, a multichannel analyzer, and a microcomputer are provided, and the reaction spectrum of the material to be processed on the semiconductor wafer being etched is measured. CONSTITUTION:The title dry etching device is composed of a light source 11, the light emitted from which is projected to the semiconductor wafer 23 located in an etching chamber 12, a spectroscope 13 to produce a spectrum of light reflected by the semiconductor wafer 23, a multichannel analyser 14 with which the separated light is detected, and a microcomputer 15 with which the input signal sent from the analyser 14 is processed, and the depth of etching is computed. To be more precise, as the etching operation performed on the material to be processed on the wafer 23 makes progress, the reflection spectorum makes a change gradually, and when the material to be processed is etched completely, said reflection spectrum makes a great change. As a result, the endpoint of the etching can be judged by monitoring the reflection spectrum sent from the wafer 23.

Inventors

• 👤 Akiyoshi Maeda
• 👤 明寿 前田

Bibliographic Details