High purity titanium silicide target for sputtering and production thereof

Abstract

Abstract PURPOSE:To suppress incorrect working by the influence of impurities and to improve the resistance, corrosion and oxidation resistances by sintering powder obtd. by pickling crushed high purity titanium silicide. CONSTITUTION:High purity titanium and silicon are melted in vacuum to produce high purity titanium silicide. This titanium silicide is crushed, pickled and dried. The resulting high purity titanium silicide powder is sintered at a temp. below the m.p. to obtain a target for sputtering having >=99.99% titanium silicide content and >=80% relative density. The impurities in the target are restricted to <=10ppm metallic impurities, <=50ppm C, <=500ppm O2, <=10ppm H2, <=50ppm N2 and <=1ppm other impurities.

Inventors

• 👤 Tetsuo Shibutami
• 👤 哲夫 渋田見
• 👤 Tomoyuki Oikawa
• 👤 智之 及川
• 👤 Keiichiro Nishizawa
• 👤 西沢　恵一郎

Bibliographic Details