Manufacture of solar cell element

Abstract

Abstract PURPOSE:To form resistance values of a N<+> region and an N layer in an optimum condition easily and with good reproducibility by forming the N<+> layer by applying a past containing group N elements in the periodic table on the N layer and heat treating it. CONSTITUTION:The surface which is to become the photo detecting surface of a silicon wafer 1 is coated with a past 6 which contains group V elements the period table in substantially the same manner as the surface electrode pattern by the use of a thick film method, and thereafter it is heated in a heating and calcinating furnace. By this heat treatment, the atoms contained in the paste 6 are diffused into an N layer 11 of the silicon wafer 1, whereby a N<+> region 13 is formed which is a high-concentration doped region of substantially the same shape as the surface electrode pattern. With this, the N<+> region 13 of a predetermined resistance value can be formed in the N layer 11 easily and with good reproducibility.

Inventors

• 👤 Katsuhiko Shirasawa
• 👤 勝彦 白沢
• 👤 Kenichi Okada
• 👤 健一 岡田
• 👤 Hironori Yamashita
• 👤 山下　浩徳
• 👤 Hiroyuki Watanabe
• 👤 博之 渡辺

Bibliographic Details