Semiconductor device

Abstract

Abstract PURPOSE:To increase a one-dimensional quantum effect remarkably and to improve the characteristics of a semiconductor device using said quantum effect, by making the surface orientation of a substrate to be 111 surface orientation basically. CONSTITUTION:The electronic energy structure of a semiconductor is largely different based on crystal orientation, a one-dimensional quantum effect is different based on said orientation. In comparison with a conventional <111> surface orientation, the larger quantum effect is obtained in a <100> surface orientation. An element structure is constituted on the surface (111) of a substrate. A semiconductor device, which has more excellent characteristics than those of an element structure on a (100) surface, is implemented by using the quantum effect in the <111> surface orientation.

Inventors

• 👤 Toshiro Hayakawa
• 👤 利郎 早川
• 👤 Naohiro Suyama
• 👤 尚宏 須山
• 👤 Masafumi Kondo
• 👤 雅文 近藤
• 👤 Kousei Takahashi
• 👤 向星 高橋

Bibliographic Details