Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To form an interlayer insulating film provided with both very excellent flatness and excellent machinability for forming a through hole, by providing a first flattening step for first and second inorganic interlayer insulating films, a second flattening step for the first and second inorganic interlayer insulating films, and a steps for forming a third, organic interlayer insulating film. CONSTITUTION:The entire surface of a substrate 1 including a first aluminum wiring conductor layer 3 is covered with a first interlayer insulating film 4. An inorganic insulating film, which is thickly formed on the entire surface of the substrate 1, undergoes an anisotropic etching step. Thus a tapered second interlayer insulating film 5, which covers only the side surface of the aluminum wiring conductor, is formed. The first and second interlayer insulating films 4 and 5 undergo a first flattening step by an applying method using an inorganic or organic insulating film 6. A second flattening step is performed so as to remove the applied film from the upper surface of the aluminum wiring conductor 3. Thereafter, a third inorganic interlayer insulating film 7 is formed on the entire surface. Since the two flattening steps are carried out, the very flat structure of the interlayer insulating films including even the third inorganic interlayer insulating film 7 is provided.

Inventors

• 👤 Seiji Takao
• 👤 誠二 高尾

Bibliographic Details