Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To reduce contact resistance, and to increase the density of an interconnection by forming a first interconnection, an interlayer insulating film and a second interconnection, shaping an opening section to the crossing section of these first and second interconnections and burying a conductive film into the opening section. CONSTITUTION:An Al interconnection 7 as an upper layer is formed onto a PSG film 6, and an SiN film 8 is applied onto the whole surface through a plasma technique. An SiN film 8, the Al interconnection 7 and the PSG film 6 are removed partially, using a patterned resist film as a mask, thus shaping an opening section 9 to the crossing section of an Al interconnection 5 and the Al interconnection 7. An Al film 10 is applied through a vertical evaporation method, and the Al film 10 on the SiN film 8 is gotten rid of through polishing, employing the SiN film 8 as a stopper. Consequently, a semiconductor device having structure in which an Al member 11 is buried into the opening section 9 is completed. Accordingly, contact resistance is reduced, and the density of the interconnections can be increased.

Inventors

• 👤 Akira Tabata
• 👤 田畑　晃

Bibliographic Details