Susceptor cover

Abstract

Abstract PURPOSE:To facilitate removal of silicon produced on a support base for supporting a semiconductor substrate by covering the top face of the support base with an anticorrosive plate-like coating formed at a high temperature. CONSTITUTION:A silicon substrate 2 on which epitaxy is to be performed is disposed on a support base 1, and the support base is covered with a cover 3 of quartz, SiC, Si3N4 or the like. The thickness of the cover is about 3 mm. In this manner, vapor deposition products adhere to the cover but not to the support base. Thus, the top face of the support base can be kept clean and the period of time required for removing vapor deposition products can be decreased.

Inventors

• 👤 Hiromitsu Nakanishi
• 👤 中西　宏円
• 👤 Shoichi Takahashi
• 👤 高橋　捷一

Bibliographic Details