Conductive film circuit

Abstract

Abstract PURPOSE:To obtain a circuit characterized by high corrosion resistance and high reliability, by forming a circuit pattern on an insulating substrate or on a semiconductor substrate by using any one kind of metal selected among tantalum, titanium, tin and niobium or at least by coating the pattern with said metal. CONSTITUTION:An insulating film 1 comprising Ta2O5 is formed on, e.g., a glass substrate. A circuit pattern is formed with a conductive film 2a comprising any one kind of metal selected among tantalum, titanium, tin and niobium. An SiO2 film 4, an insulating film (Ta2O5) 1 and an electrode 5 comprising said one kind of metal are sequentially formed and lapped one over the other. After the insulating film 1 is formed on the substrate 3 comprising glass, a conductive film 2a comprising aluminum, copper, nickel, chromium and the like is formed. The conductive film 2b is completely coated with the conductive film 2a comprising said one kind of metal. Thus a circuit pattern is formed. Then, the SiO2 film 4, a conductive film 5b comprising aluminum, copper, nickel, chromium and the like, and a reinforcing protection film 6a comprising low- melting-point glass are sequentially formed and lapped one over the other, and the circuit is formed.

Inventors

• 👤 Takao Sugishita
• 👤 杉下　隆雄
• 👤 Hiroshi Watanabe
• 👤 弘 渡辺
• 👤 Satoru Ishihara
• 👤 哲 石原

Bibliographic Details