Plane display device

Abstract

Abstract PURPOSE:To preclude an electrostatic breakdown due to charges accumulated in the light shield film of a plane display device which utilizes a thin film transistor (TR) active matrix by connecting the light shield film to a gate electrode electrically. CONSTITUTION:A glass substrate SUB 1 has specific thickness and a gate electrode GT is a gate electrode made of Cr, etc. Further, a film GI which operates as the gate insulating film of an FET is formed between the electrode GT and substrate SUS 1. Then, the light shield film LS formed in each thin film TR TFT is connected to the gate electrode GT of each TFT by wiring which is formed of a conductive material such as Cr buried in a through hole penetrating a protection film PSV 1. Consequently, the electrode GT and light shield film LS of each TFT are held at the same potential all the time to eliminate a dielectric breakdown due to the potential difference between them.

Inventors

• 👤 Kiichi Kin
• 👤 金　基一
• 👤 Kazuo Sunahara
• 👤 砂原　和雄
• 👤 Ryoji Oritsuki
• 👤 折付　良二
• 👤 Kenichi Shimada
• 👤 賢一 島田

Bibliographic Details