Semiconductor device

Abstract

Abstract PURPOSE:To provide the sufficiently large ratio of current driving ability without depending on the sizes of transistors, by constituting one transistor with a p<+> polysilicon gate, and constituting another transistor with an n<+> polysilicon gate. CONSTITUTION:Phosphorus (p<+>) ions are implantated in a region 1 and boron (B<+>) ions are implanted in a region 2. An n<-> embedded channel 16 is formed beneath a p<+> polysilicon gate 9 in the region 1. A p<+> surface channel 17 is formed beneath an n<+> polysilicon gate 9 in the region 2. Therefore a current flows only through the embedded channel 16. In the case of an n-channel MOSFET, the mutual conductance between driver transistors T1 and T2 becomes larger than the mutual conductance between transfer transistors T3 and T4 by about 10%-20%. Thus the ratio of the current driving ability for the transistors T1-T4 for the driver and the transfer can be made sufficiently large without depending on the sizes of the transistors by providing the p<+> polysilicon gate 8.

Inventors

• 👤 Shinichirou Ikemasu
• 👤 慎一郎 池増

Bibliographic Details