Manufacture of thin film transistor

Abstract

Abstract PURPOSE:To enable the manufacture of self-alignment type a-SiTFT without necessitating lift-off of an N<+>-a-Si film and thereby to improve characteristics, by a method wherein a metal film is deposited in a state wherein a resist film is left only above a gate electrode, the resist film is removed by dissolution with simultaneous removal of the metal film above the gate electrode, and an a-Si film is dry-etched with the remaining metal film used as a mask. CONSTITUTION:A resist is not applied on a second insulating film 5 which is etched, a second a-Si film 7 and a resist are deposited sequentially, a metal film 9 is connected in a state wherein a second resist film 8 formed by the deposition is left only above a gate electrode 2, and the metal film 9 above the gate electrode 2 is removed by removing the second resist film 8 by dissolution. Then, with the remaining metal film 9 used as a mask, the a-Si film 7 is removed by etching, and a source electrode 10 and a drain electrode 11 are formed. Since lift-off of an N<+>-a-Si film is not necessitated according to this method, selfalignment type a-SiTFT being suitable for mass production and having stable performances can be manufactured.

Inventors

• 👤 Mitsuhiro Koudono
• 👤 充浩 向殿

Bibliographic Details