Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To reduce an element isolation region and simultaneously prevent generation of damage in a substrate, by performing selective oxidation after forming the offset of an Si3N4 film wherein an SiO thin film is formed for an Si substrate. CONSTITUTION:An SiO2 12, and Si3N4 13 and an SiO2 14 are stacked on a P-type Si substrate 11. A mask is formed, RIE is performed, an SiO2 thin film 15 is arranged, and an Si3N4 thin film 16 and an SiO2 film 17 are deposited. Then a sidewall 17' of SiO2 is formed by RIE, and the Si3N4 16 and the SiO2 15 are eliminated by etching. The SiO2 14 and the sidewall 17' are subjected to wet etching, and an offset 16' of the Si3N4 film is formed. Thus an offset of Si3N4 is formed which has the SiO2 thin film 15 as a buffer layer arround a prearranged element isolation region. After a P-type inversion protection layer 18 is formed by implanting ions, a field oxide film 19 is formed by wet oxidation. By this constitution, the element isolation region can be reduced, and damages do not generate in the substrate.

Inventors

• 👤 Yoichi Tatewaki
• 👤 帯刀　洋一
• 👤 Mitsuhiro Tsubakiyama
• 👤 椿山　光宏

Bibliographic Details