Semiconductor storage device

Abstract

Abstract PURPOSE:To prevent a read voltage difference from lowering to enlarge a read margin and to improve a soft error ratio by providing one or plural number of cross parts in respective pairs of bit lines in such a way that interbit capatity between pairs of bit lines adjacent to respective pairs of bit lines are equal. CONSTITUTION:Respective pairs of bit lines BL0, the inverse of BL0, BL and the inverse of BL1 are divided into four segments (a)-(d), and they cross at uniform points CP1-CP3. Namely, odd-numbered pairs of bit lines counted from the bit lines BL0 and BL0 the inverse of cross at the CP2, and even- numbered pairs of bit lines cross at the CP1 and the CP3. Since the capacity connection noise which respective pairs of bit lines receive from the adjacent pairs of bit lines at the time of signal reading are totally equal, the lowering of read voltage difference by the noise can totally be eliminated. Thus, the enlargement of the read margin and the improvement of the soft error ratio can be improved.

Inventors

• 👤 Hideto Hidaka
• 👤 秀人 日高

Bibliographic Details