Pattern formation

Abstract

Abstract PURPOSE:To form a stable insulating pattern or three layer resist pattern easily by a method wherein a resin thin film comprising organopolysiloxane is formed on a semiconductor substrate whereon a pattern-formed thin film is formed to be coated with a solvent containing organoperoxide and then heated moreover a high polymer thin film sensing light, X-ray, electron beams, etc., is formed thereon. CONSTITUTION:A substrate whereon an interconnection metal 2 is formed is spin-coated with a silicon resin 3 comprising e.g. dimethylpolysiloxane to form an insulating film by heating in an oven. Moreover, the surface is protected against solvent of resist by dripping a peroxide comrising e.g. t- butylperoxybenzonate to be heated after spinning process for increasing the bridge density of surface layer. Next, the surface is spin-coated with ultraviolet ray, X-ray or electron beam resist 4 and then irradiating with respective rays using specified mask or data and developed by an arbitrary solvent to form patterns 5. Finally, the silicon resin 3 is dry etched by gas plasma such as CF4 etc. using the patterns 5 as masks.

Inventors

• 👤 Hideo Ikitsu
• 👤 英夫 生津

Bibliographic Details