Thin film transistor

Abstract

Abstract PURPOSE:To suppress thermal diffusion of electrode material and to implement a short channel, by forming the source and drain electrodes of a thin film transistor composed of a II-IV compound out of thin NiCr films. CONSTITUTION:An Al gate electrode 2 is formed on a glass substrate 1. A gate insulating film 3 consisting a thin Al2O3 film is formed thereon. Then a thin film 6 of CdSe or CdS, in which an adequate amount of In as impurities is added, is formed thereon. Thereafter, a thin NiCr film and a thin Au film are laminated as a source electrode 4 and a drain electrode 5. Since bonding between constituent elements is strong in NiCr, thermal diffusion is considerably suppressed in comparison with the base where only Cr is used, and a short channel can be implemented.

Inventors

• 👤 Mikihiko Nishitani
• 👤 幹彦 西谷
• 👤 Masaharu Terauchi
• 👤 正治 寺内
• 👤 Koji Nomura
• 👤 幸治 野村
• 👤 Yoichi Harada
• 👤 洋一 原田
• 👤 Kuni Ogawa
• 👤 小川　久仁
• 👤 Noboru Yoshigami
• 👤 由上　登
• 👤 Kenji Kumabe
• 👤 隈部　建治

Bibliographic Details