Semiconductor integrated circuit device

Abstract

Abstract PURPOSE:To implement high precision control of temperature in an operating region, by detecting the voltage-current characteristic of a Shottky barrier diode (SD) element formed on a substrate. CONSTITUTION:On a semi-insulating GaAs substrate 1, a non-doped GaAs layer 2, an Si doped N-type Al0.3Ga0.7As layer 3 and a GaAs layer 4 are sequentially grown. Then, element isolating regions 5 are formed. An ohmic contact electrode 15 of an SD element and source and drain electrodes 25 of a high electron mobility FET (HEMT) element are provided on the layer 4. Heat treatment is performed, and alloy regions 15A and 25A are formed. Then, the layer 4 is selectively etched, and the layer 3 is exposed. A Schottky electrode 16 and a gate electrode 26 of the HEMT element are provided. This circuit device is cooled with liquid nitrogen and operated. The flow rate of the liquid nitrogen is controlled based on the characteristics of the SD element. Thus the operating temperature of the HEMT element can be kept at high precision.

Inventors

• 👤 Teruo Yokoyama
• 👤 横山　照夫

Bibliographic Details