Photo transistor

Abstract

Abstract PURPOSE:To make it possible to operate a transistor at a low voltage, by providing a multiple-quantum-well structure, in which two or more well layers and barrier layers are alternately laminated between a collector layer and a base layer, and gradually changing the forbidden band width of the barrier layers in the direction of a film thickness. CONSTITUTION:On an n-GaAs substrate 1, the following layers are sequentially grown as crystals: a collector layer 2; an i-AlGaAs layer 3; a multiple- quantum-well structure (i-MQW layer) 4; an i-AlGaAs layer 5; a base layer 6; and an emitter layer 7. At this time, as the barrier of the i-MQW layer 4, a barrier, whose forbidden band width is changed in the direction of the film thickness in a graded mode, is used. Since electrons can pass without being captured in the i-MQW layer 4 even at a low electric field, a transistor can be operated at a low voltage.

Inventors

• 👤 Mitsunori Sugimoto
• 👤 杉本　満則

Bibliographic Details