Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To improve on a semiconductor element layer in capability to withstand electromigration and in performance uniformity by a method wherein a prescribed metal wiring pattern is built on an insulating film formed on a semiconductor element layer and atoms different from those constituting the metal are added to the metal wiring layer by ion implantation. CONSTITUTION:An insulating layer 2 is formed on a semiconductor element layer 1, and a metal layer 3 of aluminum for example is laid on the insulating layer 2. Next, by means of ion implantation, a beam of atoms 4 different from those of the metal layer 3 is introduced into the surface of the metal layer 3. For example, the atoms 4 may be of copper or titanium quite effective against electromigration. With an ion implantation process accomplished under these conditions being capable of proper control of energy to be injected, scattering of crystallinity in aluminum after spattering is rendered homogeneous for the realization of a homonegeously structured amorphous wiring layer. A semiconductor device produced by this process is high in reliability and may be accurately controlled in terms of performance characteristics.

Inventors

• 👤 Kuniya Satou
• 👤 佐藤　圀彌

Bibliographic Details