Manufacture of conductive region in semiconductor substrate

Abstract

Abstract PURPOSE:To easily and inexpensively form a conductive region while maintaining the crystallinity of a silicon around it by determining the position of a desired conductive region, and implanting metal atoms to a desired position on a substrate of crystal structure by a metal ion beam. CONSTITUTION:A pattern mask 14 is so mounted on the surface of a substrate 10 that a hole 16 is matched at its position to a well 12, and an ion implanting unit is used to accelerate metal ions 18 toward the substrate 10. As a result of ion implantation, a conductive silicide region 20 is formed on the substrate 10, the energy of the ions 18 is suitably selected to be formed in the well 12 of the substrate 10. The larger the kinetic energy of the ions 18 proceeded by the substrate 10 becomes, the deeper the ions are implanted to the substrate. Thus, the conductive region can be easily and inexpensively formed while maintaining the crystal of the silicon around it in the semiconductor substrate.

Inventors

• 👤 Chiyangu Chiu Kin
• 👤 キン・チャング・チウ

Bibliographic Details