Light-emitting diode

Abstract

Abstract PURPOSE:To generate high luminous power conversion efficiency by continuously growing a light-emitting layer and an insulating layer in an epitaxial manner and preventing the presence of an impurity and a defect on the interface. CONSTITUTION:A contact layer 2 consisting of N-type Zn selenide grown in an epitaxial manner in succession is formed onto an N-type magnetized Ga single crystal substrate 1. A light-emitting layer 3 consisting of N-type ZnSe having electron density lower than the contact layer 2 and an insulating layer 4 composed of insulating ZnSe are shaped. The insulating layer 4 may be left as it is when the raw materials of Zn and Se have high purity at that time, but resistance thereof can be increased by adding either of nitrogen, P, As, Li or Na. A metallic electrode layer 5 is formed to at least one part of the surface of the insulating layer 4. Gold, etc. having a large work function are employed in order to improve the injection efficiency of holes as the layer 5, thus acquiring high luminous power conversion efficiency.

Inventors

• 👤 Tsuneo Mitsuyu
• 👤 常男 三露
• 👤 Kazuhiro Okawa
• 👤 和宏 大川
• 👤 Osamu Yamazaki
• 👤 山崎　攻

Bibliographic Details