Semiconductor laser

Abstract

Abstract PURPOSE:To obtain the efficient characteristics of a semiconductor laser with low threshold value and high light utility rate by forming a mesa near the end face, and suitably setting an oversaturation to eliminate the growth of an active layer on the top of the mesa. CONSTITUTION:With a photoresist as a mask a groove 11 is formed corresponding to a light emitting unit on a substrate 1 by chemical etching and a mesa 10 is formed in contact with the end face. At this time, it is so etched that the both groove sides of the groove 11 become equal height to the mesa 10. After a photoresistor is removed, semiconductor layers 2, 3, 4, 5, 6 are sequentially grown on the substrate 1. In this case, the oversaturation degrees of the growing solution of the N-type clad layer 2, the N-type optical guide layer 3 and the P-type clad layer 5 are set highly to 5 deg.C or higher, and the oversaturation degree of the growing solution of the active layer 4 is set to low to 1 deg.C or lower. when the oversaturation degree of the solution is low and the width of the mesa is narrow, the growth on the top of the mesa 10 is suppressed. As a result, the layer 4 is not grown on the mesa 10.

Inventors

• 👤 Makoto Ishikawa
• 👤 信 石川

Bibliographic Details