Semiconductor substrate

Abstract

Abstract PURPOSE:To prevent the accumulation of energy due to the difference in grating constant as well as to remove the troubles pertaining to a grain boundary, a crystal defect, a twin crystal and the like on the title substrate by a method wherein an insulating layer is composed of a plurality of layers, and the thickness of each layer is properly set. CONSTITUTION:After a thin insulating material layer 2 is epitaxially grown on the parent substrate 1, a buffer layer 3 is epitaxially grown immediately, the accumulation of distortion is prevented and at the same time, a part of which is alleviated. Then, an insulating layer 4 is provided by laminating the insulating material layer 2 and the buffer layer 3 alternately in a plurality of layers, and lastly a necessary active epitaxial layer 5 is formed. When the buffer layer 3 consists of an insulating material, the insulating layer 4 is formed in the necessary insulation isolation film thickness. It is presumed that there is an optimum value in the layers 2 and 3, but experimentally several hundred Angstrom or thereabout is considered suitable, and it is desirable that said thickness is varied in accordance with the amount of lattice dismatching.

Inventors

• 👤 Koichi Kugimiya
• 👤 公一 釘宮
• 👤 Yuichi Hirofuji
• 👤 裕一 広藤
• 👤 Naoto Matsuo
• 👤 直人 松尾

Bibliographic Details