Photovoltaic device

Abstract

Abstract PURPOSE:To form a uniform junction electric field by forming an irregular surface by etching at different etching rates an impurity layer made of mixed phases of a plurality of semiconductors having different etching rates, thereby substantially flattening the junction boundary of a semiconductor junction. CONSTITUTION:An N-type layer 3n is formed by mixed phase semiconductors having different etching rates, such as mixed phase semiconductors of mixed phases of fine crystal semiconductor such as fine crystal silicon and amorphous semiconductor such as amorphous silicon are etched with aqueous solution of KOH or HF:HNO3:H2O=1:1:10 as an etchant. The amorphous silicon is removed by etching, but the fine crystal silicon is not almost etched. Accordingly, the portion of the fine crystal silicon of small etching rate remains, the boundary 34 of the layer 3n becomes irregular. Thus, the junction boundary of the semiconductor junction is textured, but substantially flattened. Therefore, a uniform junction electric field is formed, and the decrease in the withstandingness to the reverse voltage can be suppressed.

Inventors

• 👤 Yukio Nakajima
• 👤 行雄 中嶋
• 👤 Hisao Haku
• 👤 白玖　久雄
• 👤 Kaneo Watanabe
• 👤 渡邉　金雄
• 👤 Tsugifumi Matsuoka
• 👤 松岡　継文

Bibliographic Details