Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To enable a thin oxide film to be formed with good control by forming an oxide film through heating in an oxidation atmosphere using a light. CONSTITUTION:After a field oxide film 2 is formed on a monocrystalline silicon substrate 1, this is heated in an oxidation atmosphere for several to several tens of seconds at 800 deg.C-1,200 deg.C. This may be performed by, for instance, heating with a halogen lamp in an oxygen gas, and by this method, a thin gate oxide film 3 of several tens Angstrom can be formed with good control. Subsequently a gate electrode is formed, and a MOS device is manufactured by using the conventional process.

Inventors

• 👤 Keimei Mikoshiba
• 👤 御子柴　啓明
• 👤 Kimiko Nakamura
• 👤 公子 中村

Bibliographic Details