Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To accurately form an FET of offset gate structure by removing an insulating film of drain side on a gate electrode, then ion implanting, then with the film as a mask removing a gate electrode of the drain side. CONSTITUTION:After an N-type semiconductor layer 2 is formed on a GaAs substrate 1, a high melting point metal film 3 of the length corresponding to a distance between high melting point metal drain and source regions and an SiO2 film 4 are formed. Then, photoresist 5 as a mask the film 4 is partly removed, a silicon implanted layer 7 is formed. Then, with an SiO2 film 4' as a mask high melting point metal 3 is etched as a gate electrode 3'. The layer 7 is formed in a high density n-type semiconductor layer 8 by heat treating in arsenic atmosphere. Eventually, after a source electrode (not shown) is formed, the SiO2 film 4' is removed. Thus, an FET of offset gate structure can be accurately obtained.

Inventors

• 👤 Takeshi Konuma
• 👤 小沼　毅
• 👤 Katsunori Nishii
• 👤 勝則 西井

Bibliographic Details