Manufacture of soi structure misfet

Abstract

Abstract PURPOSE:To improve the bondability of a single crystal silicon with an insulating film by laminating an oxide film and a nitride film on a substrate, then laminating a polysilicon layer in a groove formed with the nitride film, and emitting energy beam to form a single crystal. CONSTITUTION:After an SiO2 film 2 is formed on a silicon substrate 1, an Si3N4 film 9 is laminated. Then, a groove 10 is opened in the film 9 in a region corresponding to the channel region of a transistor formed on the insulating films to expose the film 2. Then, a polysilicon layer 3 is grown, argon ion laser is emitted to crystallize a single crystal region. A gate oxide film 5 and a gate electrode 6 are formed, a source region 7, a drain region 8 are formed to form the integrated circuit of a 3-dimensional structure. Thus, the strength against exfoliation can be raised.

Inventors

• 👤 Seiichiro Kawamura
• 👤 河村　誠一郎

Bibliographic Details