Semiconductor memory device

Abstract

Abstract PURPOSE:To avoid the deviation of channel lengths by providing a part where a capacitor plate overlaps a word line. CONSTITUTION:After a thin oxide film and a field oxide film 5 are formed on a P-type silicon substrate 1, a word line 3 is patterned to have a width L1. After the word line 3 is covered with a thin oxide film, a capacitor plate 4 is patterned so as to make a part of the plate 4 overlaps the word line 3. After that, an N<+> type diffused region 2 is formed by ion implantation or the like and a layer insulating film 6, a bit line 7 and so forth are laminated one upon another. With this constitution, the channel lengths of MOS transistors which perform switching operation can be uniformized through the respective memory cells and, moreover, the distance between the word line ad the capacitor plate can be shortened so that the integrity can be improved.

Inventors

• 👤 Masataka Shinguu
• 👤 新宮　正孝
• 👤 Hideaki Kuroda
• 👤 英明 黒田

Bibliographic Details