Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To form a contact hole part in a tapered shape as well as to prevent the increase in wiring resistance and the generation of breakage of wire by a method wherein, after the contact region insulating film layer of the prescribed pattern and a photoresist mask have been formed on a substrate, the insulating layer is etched to its intermediate thickness, then a photoresist film is removed, a polycrystalline silicon layer is formed on the whole surface, the whole surface of said polycrystalline silicon layer is etched, a photoresist mask is formed, and then a contact hole is perforated on the insulating film. CONSTITUTION:After a thick oxide film 2 has been formed on a semiconductor substrate 1, an impurity region 3 having the conductive type reverse to that of the semiconductor substrate is formed. Then, a transistor gate, consisting of polycrystalline silicon or a high melting point metal and the like, a first wiring layer 4 are formed, and subsequently, an interlayer insulating film 5 and the mask pattern, to be used for formation of the first contact hole on the surface of the insulating film 5, are formed. Then, said interlayer insulating film 5 is etched to the depth of about one half of the thickness of the insulating film 5, and the photoresist mask 6 is removed. Subsequently, when an etching is performed on the whole surface after a polycrystalline silicon layer 8 has been formed on the whole surface, a polycrystalline silicon of the width of DELTAW corresponding to the thickness of the interlayer insulating film 5 can be left on the edge part of the contact hole and the stepped part of the interlayer insulating film.

Inventors

• 👤 Takashi Tsukura
• 👤 津倉　敬

Bibliographic Details