Semiconductor integrated circuit device

Abstract

Abstract PURPOSE:To prevent software errors and to improve electric reliability with respect to keeping of data, by providing a semiconductor region, to which a fixed potential is applied, in the vicinity of a data storing part, in a semiconductor integrated circuit device provided with a memory function. CONSTITUTION:A memory cell is formed by transfer MISFETs Qs1 and Qs2, which are to become switching elements, and a flip-flop circuit having a pair of input/output terminals, which is to become a data storing part. a semiconductor region 3 is embedded in a well region 2 at a position in the vicinity of the data storing part of the memory cell. The region 3 is extended in the direction of a row (or in the direction of a column). A power source voltage Vcc is applied to the semiconductor region 3, and a semiconductor region L at a fixed potential is formed. Thus part of minority carriers yielded by alpha rays is absorbed into the semiconductor region 3. Therefore, software errors are prevented, and electric reliability in keeping information data can be improved.

Inventors

• 👤 Kiyobumi Uchibori
• 👤 内堀　清文
• 👤 Hideaki Nakamura
• 👤 英明 中村

Bibliographic Details