Manufacturing method of semiconductor device

Abstract

Abstract PURPOSE:To obtain a semiconductor device capable of forming a groove-shaped capacitor having large capacitance without increasing an occupying area by shaping a groove in the groove-shaped capacitor in double structure. CONSTITUTION:A groove 40 is formed to an silicon substrate 21. A diffusion layer 22 is shaped onto the surface of the substrate 21 in a capacitor-forming region and around the groove 40, and an silicon nitride film 25 is deposited. A polycrystalline silicon film 26 is deposited on the whole surface in thickness thinner than the half of groove width and changed into a conductor, and an silicon oxide film 27 is formed on the surface. A small groove 28 shaped into the groove 40 is buried completely with a polycrystalline silicon film 30, the film 30 is turned into a conductor, and an silicon nitride film 29 is formed onto the surface. An opening 33 is shaped, and the surface of the nitride film 25 is exposed. An silicon oxide film 37 is shaped on the side wall of the silicon film 26 in the opening section 33, the nitride film 29 and the nitride film 25 in the opening section 33 are removed, and the opening section 33 is buried with a polycrystalline silicon film 31, and the film 31 is converted into a conductor.

Inventors

• 👤 Nobusato Gotou
• 👤 後藤　信里

Bibliographic Details