Manufacture of field effect transistor

Abstract

Abstract PURPOSE:To make the length of a gate extremely short, by reducing the gate length shorter than a size determined by exposure technology. CONSTITUTION:A metal film 20 is etched by a etching method such as ion milling. At this time, the thickness in the depth direction of the metal film, which is deposited in a groove 21, is thicker than the other part. Therefore, the metal film at this part remains and a gate electrode 22 is formed. At this time, the length lg of the gate electrode 22 is reduced by twice the thickness t1 of an SiO film 19 with respect to the length l of an opening hole of an SiN film 17. For example, when l is 0.5-1.0mum, which can be implemented by ordinary exposure technology, the lg becomes 0.1 or less - about 0.6mum. Since the gate length lg can be reduced by twice the thickness t1 of the SiO2 film 19 with respect to the size l determined by the exposure technology, the very short gate length can be implemented.

Inventors

• 👤 Yuuki Imai
• 👤 祐記 今井
• 👤 Kazuyoshi Asai
• 👤 浅井　和義
• 👤 Kuniki Owada
• 👤 大和田　邦樹

Bibliographic Details