Wafer-scale LSI semiconductor device and its manufacturing method

Abstract

Abstract PURPOSE:To improve a yield rate and to reduce costs, by arraigning a plurality of IC chips on a substrate, burying gaps between the chips on the substrate with a material, which has about the same expansion coefficient as that of the chips to the approximately same height as the upper surface of the chips, and forming a wiring layer, which connects the IC chips, on the substrate. CONSTITUTION:Silicon is buried in gaps between IC chips 2. A polysilicon or amorphous silicon layer 6 is grown on the entire surface of the wafer 4 by several mum. Then, the surface of the polysilicon layer 6 is flattened by a polishing process. Thus, an Si3N4 film 3 is exposed. After the Si3N4 film 3 is etched away once, an insulating film 7 is grown on the entire surface. Then, by using a photolithography method, holes are provided in pad parts 8, which are provided by the initial wafer process on the IC chips. An Al wiring layer 9 is evaporated on the entire surface. The wiring, which connects the IC chips is patterned. A protecting film 11 is further laminated, and the internal wiring is finished.

Inventors

• 👤 Toshitaka Fukushima
• 👤 福島　敏高

Bibliographic Details