Selective growth method for semiconductor

Abstract

Abstract PURPOSE:To selectively grow a good-quality semiconductor without using a mask pattern by irradiating the surface of a substrate with a beam at a temp. where a crystal is not grown, depositing crystal component elements on the substrate and heating and annealing the substrate in a vapor phase contg. the component elements. CONSTITUTION:A substrate 5 of GaAs, etc., is kept at a temp. below the temp. where vapor phase crystal growth occurs and component elements are deposited. A gaseous mixture 8 of trimethylgallium, arsine, hydrogen, etc., is introduced into a reaction tube 1. Then a light beam 7 is passed through a lens 6 and condensed on the surface of the substrate 5. The supply of trimethylgallium among the components of the gas 8 is stopped, the temp. of the substrate 5 is elevated and the substrate 5 is annealed in an atmosphere contg. arsine and hydrogen. Consequently, a GaAs crystal is grown only at the part irradiated with the light.

Inventors

• 👤 Toru Suzuki
• 👤 徹 鈴木

Bibliographic Details