Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To manufacture an isolated structure simply and to make it possible to form a highly integrated, high withstanding voltage element, by bonding a supporting semiconductor and a semiconductor substrate through an oxide film, and forming an element forming region, with said oxide film as an insulating film at a bottom surface part. CONSTITUTION:On a main surface of a semiconductor substrate 11, which is made to be a mirror surface, an oxide film 18 is formed. Aluminum is deposited on the film 18, and an aluminum film 19 is formed. The aluminum film 19 and the oxide film 18 are etched by an RIE method. The semiconductor substrate 11 is vertically etched. When an opening has reached an oxide film 16, the etching is finished. A groove 22 is formed in the semiconductor substrate 11. The aluminum film 19 is removed. With the oxide film 18 as a mask, phosphorus is deposited, and an N<+> layer is formed on the side wall of the groove 22. The oxide film 18 is removed. An oxide film 24 is formed on the entire outer surface of the semiconductor substrate 11 including the side wall of the groove 22. Then, a material suitable for burying the groove 22, e.g., polysilicon 25, is attached by a pressure reduced CVD method. The polysilicon 25, which is attached on the semiconductor substrate is removed by the RIE.

Inventors

• 👤 Yutaka Etsuno
• 👤 越野　裕
• 👤 Yoshiaki Baba
• 👤 嘉朗 馬場

Bibliographic Details