Semiconductor pressure detecting device and manufacture of the same

Abstract

Abstract PURPOSE:To obtain excellent sealing and sufficient mechanical strength at junction parts by a method wherein a pedestal and a silicon device are joined with anode junction and the pedestal and a substrate are joined by high melting point solder through a metallized layer formed on the surface of the pedestal. CONSTITUTION:A silicon device 12 is joined solidly on the surface of a pedestal 13 which is composed of pyrex glass with anode junction. On the other surface of the pedestal 13, a metallized layer 15 is formed as a foundation. The metallized layer 15 consists of a Ni-Cr alloy thin film, a Ni thin film and an Au thin film and the respective films are formed by vacuum evaporation or sputtering and the Au thin film layer is exposed as an adhesion surface. The pedestal 13 is bonded and fixed by Au-Sn system high melting point solder 17 directly to a substrate 16 which is made of the material with linear expansion coefficient similar to that of silicon and provides hermetic sealing. In the manufacturing process, grooves 23 and the metallized layer 15 are formed on a pyrex glass plate 22 beforehand and the metallized layer 15 used as a junction electrode.

Inventors

• 👤 Osamu Ina
• 👤 伊奈　治
• 👤 Osamu Ito
• 👤 治 伊藤

Bibliographic Details