semiconductor equipment

Abstract

Abstract PURPOSE:To obtain a load element having high resistance with small prescribed area by forming a contact of a polycrystalline silicon film controlled in the density of an N-type impurity as a load resistance of a static memory cell with a polycrystalline silicon film to which an impurity is not added. CONSTITUTION:A polycrystalline silicon 10 reduced in the resistance is so formed as to ohmically contact with wiring electrode of aluminum added in high density of N-type impurity on a silicon oxide film 5, and a region 12 which contains 10<15>-10<17>cm<-2> of relatively low N-type impurity density is provided partly. A high resistance portion is formed at the contacting surface of the region 12 in the polycrystalline silicon with a polycrystalline silicon 9 at added with an impurity formed to overlap at one end with the region 12. A diode (N-I junction) due to the impurity density difference is formed in the contacting surface of the silicon 12 of low N-type impurity density with the non-doped silicon 9 is formed. Thus, a power source voltage is supplied from the silicon 10 to obtain a high resistance element.

Inventors

• 👤 Toshiaki Yamanaka
• 👤 俊明 山中
• 👤 Yoshio Sakai
• 👤 芳男 酒井

Bibliographic Details