Semiconductor device

Abstract

Abstract PURPOSE:To reduce the parasitic capacity of a bonding pad by a method wherein a lower region whereon the bonding pad is formed is separated electrically from other regions by isolation. CONSTITUTION:In IC 21, a pad 23 is provided on the top of an oxide film 22. An Au wire 24 is connected to an inner lead. An N<-> epitaxial layer 25 under the pad 23 is surrounded by a P<+> isolation 26 at an earthing potential, forming an insular region of small area separated from other regions. An N<+> buried layer is not formed in this insular region, and the region is put in the state of floating. Although C11-C14 parasitic capacities are formed, the values of the capacities are very small, since these values are not reversely-biased.

Inventors

• 👤 Tomoyoshi Kurisaki
• 👤 栗崎　智義
• 👤 Shigeru Kadokawa
• 👤 滋 門川

Bibliographic Details