Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To obtain an air bridge having its flattened surface by a method wherein a lower electrode wiring layer having its contact regions outside the recessed pat is formed and second upper electrode wiring layers connected to the contact regions are formed. CONSTITUTION:The configuration of a recessed part 22 is formed into a trape zoid consisting of the sides of a (111) plane consisting of a mesa configuration 28 and an inverse mesa configuration 30 and the bottom surface 29 of a (100) plane and after an Si3N4 film 31 is removed, lower electrode wiring layer 25 of Ti/Pt/Au is formed in a [01'1'] direction ranging from the mesa configura tion 28 to the bottom surface 29. Then, a soluble resin 34 is applied on the whole main surface of a substrate 21 to perform a cure, the resin 34 is etched from the main surface of the substrate 21 and the surface of the substrate 21 is flattened leaving the resin 34 in such a way that it is buried only in the recessed part 22. Then, upper electrode wiring layers 26 which intersect with the lower electrode wiring layer 25 on the surface of the recessed part 22 and upper electrode wiring layers 36 which are used for leading out of contact regions 35 are formed across the recessed part 22, which is a cross part, in the [01'1'] direction. Lastly, the resin 34 is dissolved to form an air bridge.

Inventors

• 👤 Kazutoshi Nagano
• 👤 長野　数利

Bibliographic Details