Infrared ray heater

Abstract

Abstract PURPOSE:To make the temperature in the axial direction even by a method wherein auxiliary plates with high absorption factor or reflecting power equivalent to or exceeding those of semiconductor substrates are arranged almost in parallel therewith outside both ends of the multiple semiconductor substrates vertically erected. CONSTITUTION:Nitrogen gas is fed from a gas feeding port 7 to be ehausted from gas exhaust ports 18 while semiconductor wafers 21 are heated up to the temperature of around 1,000 deg.C by irradiation with the light from an infrared ray lamp 23. The centrally positioned multiple semiconductor substrates 21 vertically arranged receive more light from the infrared ray lamps 23 then those positioned on the outskirts thereof. However, disk type auxiliary plates 25 made of a material with high absorption factor of light fill the role of a secondary source of radiation. Therefore, the semiconductor substrates 21 positioned on the outskirts thereof can be irradiated with the light from the disk type auxiliary plates 25 in addition to the light from the infrared ray lamp 23. Through these procedures, the temperature in the axial direction of light transmitting chamber can be made even.

Inventors

• 👤 Naoki Suzuki
• 👤 直樹 鈴木
• 👤 Junichi Nozaki
• 👤 野崎　順一

Bibliographic Details