Hetero junction bipolar transistor and manufacture thereof

Abstract

Abstract PURPOSE:To reduce the capacity by forming a semi-insulation between a collector region and a base electrode leading layer, and reducing the areas of emitter- base and base-collector junctions smaller than that of an emitter electrode leading semiconductor layer. CONSTITUTION:An SiO2 film is formed on a semi-insulating GaAs substrate 16, a resist mask is formed, and etched in a mesa shape to expose a collector electrode leading GaAs layer 17. Then, an Al1Ga1-xAs emitter layer 20 and a collector 18 are merely selectively etched from the section of the mesa to recess the emitter. Then, the resist is removed, and a semi-insulating AlyGa1-yAs film 22 and a P-type GaAs film 23 are formed. Then, a resist mask is formed on emitter and base forming portions, and etched to expose a collector electrode leading GaAs layer 17. Then, the resist and the SiO2 film are removed to form ohmic electrodes 34-26. Thus, the collector and emitter capacities are reduced while holding the easiness of leading the base electrode to improve high frequency characteristics.

Inventors

• 👤 Kazuo Eda
• 👤 江田　和生
• 👤 Masaki Inada
• 👤 稲田　雅紀
• 👤 Toshimichi Oota
• 👤 順道 太田

Bibliographic Details