Semiconductor light emitting element

Abstract

Abstract PURPOSE:To manufacture an element self-aligningly in one crystal growing process and limit the current without using a current blocking layer which is doped with high concentration impurity and facilitate control of a horizontal mode with a low threshold by laminating P-type layers and N-type layers alternately on a substrate in which a recessed part is provided. CONSTITUTION:A P-type GaAs layer 12a, an N-type GaAs layer 12b, a P-type Ga0.55 Al0.45As cladding layer 13, a Ga0.9Al0.1As active layer 14, an N-type Ga0.55Al0.45As cladding layer 15, and N-type GaAs cap layer 16 and electrode metal films 17 and 18 are successively made to grow on a P-type GaAs substrate 11 in which a groove is formed. In the respective P-type and N-type GaAs layers grown on the groove, the N-type GaAs layer is inverted into the P-type layer by the diffusion of P-type dopant Zn and only one P-N junction is formed above the groove. On the other hand, inversion of the N-type GaAs layer into the P-type layer does not occur on the flat part and a plurality of P-N junctions are formed to provide a current blocking layer self-aligningly. Concerning to the control of a horizontal mode, the width (W) of a current constriction region is determined by the film thickness of the P-N multi-layer film, which functions as the current blocking layer, and precision etching is not necessary to form the groove in the substrate and a little discrepancy can be corrected easily in the crystal growing process so that the yield can be improved.

Inventors

• 👤 Yasuhiko Tsuburai
• 👤 粒来　保彦
• 👤 Motoyuki Yamamoto
• 👤 山本　基幸

Bibliographic Details