Semiconductor device

Abstract

Abstract PURPOSE:To improve heat resistance of a Schottky diode and improve reliability of a Schottky electrode while insuring excellent dry etching processability by composing the Schottky electrode of tungsten and molybdenum. CONSTITUTION:An Mo layer 18, a W layer 19, a silicon oxide film 20 and a resist layer are successively formed on the whole surface of a semiconductor substrate 8 composed of GaAs single crystal. After dry etching, a double-layer structure of Mo 12a and W 12b, of which a Schottky electrode is composed, and a silicon oxide film 20a on the double-layer structure are formed. Then, silicon ions are implanted into the semiconductor substrate 8 and N<+> type layers, of which a source 10 and a drain 11 are composed, are formed by heating to the temperature of about 800 deg.C. At that time, as the gate electrode is composed of the double-layer structure of Mo and W, fluorine system etching gas, which has high dry etching selectiveness against a gallium-arsenite substrate (the substrate is hardly etched), can be employed and, moreover, even if the substrate is subjected to heating to the high temperature of about 800 deg.C in the silicon ion diffusion process, the break-down of the Schottky diode can be avoided.

Inventors

• 👤 Atsushi Kurokawa
• 👤 敦 黒川
• 👤 Hiromitsu Mishimagi
• 👤 三島木　宏光

Bibliographic Details