Heat treatment device

Abstract

Abstract PURPOSE:To effect a uniform treatment constantly with good reproducibility by detecting the temperature of an object to be treated and the atmospheric temperature around the object to be treated and controlling a peak temperature of a wafer in the treatment based on the detected temperature. CONSTITUTION:When a fluid such as nitrogen gas is supplied into a chamber 4, a wafer 2 is inserted and put on a holder 5. The upper and lower lamps 3a and 3b are lit and heat rays are projected to the inside of the chamber 4 to start heating of the wafer 2 gradually. At this time, the envioronmental temperature signal from an envioronmental temperature sensor 7 is transmitted to a temperature profile shaping part 11 of a control part 8 in prior to the start of heating. Based on the signal amended to become a constant peak value by said temperature profile shaping part 11, an output control part 12 and a power distributing part 13 control the lighting of the lamps 3a and 3b and the wafer 2 is heated rapidly. After retaining the constant peak value, the lighting of the lamps 3a and 3b is stopped to lower the temperature of the wafer 2.

Inventors

• 👤 Shozo Tamura
• 👤 昌三 田村
• 👤 Tetsuo Watanabe
• 👤 哲夫 渡辺
• 👤 Hide Yamaguchi
• 👤 日出 山口

Bibliographic Details