Bias sputtering device

Abstract

Abstract PURPOSE:To facilitate the optimization of working conditions and to improve the quality of a film by separately controlling the high-frequency electric power to a cathode provided with a target and to a substrate holder furnished with a substrate. CONSTITUTION:A high-frequency electric power source 18 is connected to a cathode 13 provided with a target 12 and to substrate holder 15 furnished with a substrate 14 respectively through matching devices 16 and 17 in a vacuum vessel 11. A high-frequency electric power is supplied by the high-frequency power source 18 to the cathode 13 and the substrate holder 15 from a single oscillator 21 through a phase controller 22 and amplifier circuits 23 and 24. Consequently, the high-frequency incident electric powers supplied to the cathode 13 and the substrate holder 15 are controlled so that only the phase is shifted at the same frequency, the electric powers can be separately controlled and an excellent bias sputtering device can be obtained.

Inventors

• 👤 Tanejiro Ikeda
• 👤 池田　種次郎

Bibliographic Details