Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To enhance a yield and to reduce a leakage current by coating an insulating film on a semiconductor substrate, opening a window, deeply diffusing one conductivity type region, then expanding the area of the window, coating the entire surface with a reverse conductivity type diffusion source film, and heat treating it to form a region having a wide area and a shallow reflection conductivity type on one conductivity type region. CONSTITUTION:An insulating film 11 is coated on a semiconductor substrate 10, a window is opened, and an N<+> type region 12 is formed at a deep position by thermal diffusing or ion implanting. Then, the window of the opened film 11 is expanded with the mask, and the entire surface which includes the expanded hole 13 is coated with a reverse conductivity type diffusion source film 14. Thereafter, a P<+> type region 15 having a wider area than the region 12 is disposed on the region 12 by heat treating to form a semiconductor device such as a varicap diode. Thus, the manufacturing yield is improved, and a leakage current level is improved.

Inventors

• 👤 Noboru Yamamoto
• 👤 昇 山本
• 👤 Junichi Okano
• 👤 岡野　順市

Bibliographic Details