Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To form an SiO2 film characterized by an excellent drain-gate leak current and an excellent gate withstanding voltage characteristic around a gate electrode, by using a halogen lamp, performing heat treatment in an O2 atmosphere for a short time, thereby suppressing redistribution of source and drain impurity ions to the minimum required degree. CONSTITUTION:On a silicon substrate 11, an element isolating insulating film 12, a gate oxide film 13 and a gate electrode 14 are formed. Then, by using an electric furnace, heat treatment is performed in an O2 atmosphere at a high temperature for a long time period. Thus an SiO2 thin film 15 is formed. After the formation of the SiO2 thin film 15, source and drain impurity ions 16 are implanted. The SiO2 thin film 15 receives damages owing to the ion implantation, and the film quality is deteriorated. Therefore, by using a halogen lamp, heat treatment is performed in the O2 atmosphere for a short time period. At this time, the diffusion in the source and drain regions 16 is very little, and a shallow junction 16 can be formed.

Inventors

• 👤 Juri Kato
• 👤 樹理 加藤

Bibliographic Details