Surface treating method of compound semiconductor

Abstract

Abstract PURPOSE:To remove a transforming layer in a GaAlAs layer, and to form a clean smooth surface by etching one part of a GaAs layer on the GaAlAs layer by using an NH4OH group etching liquid and treating the surface by a H2SO4 group etching liquid. CONSTITUTION:An n-type GaAs buffer layer 2, an n-type AlGaAs clad layer 3, an AlGaAs active layer 4, a p-type AlGaAs clad layer 5 and an n-type GaAs current stopping layer 6 are crystal-grown on an n-type GaAs substrate 1 in succession. A photo-resist film 7 is applied onto the stopping layer 6, and a striped window is bored to the film 7 in parallel with the <110> direction. One part of a wafer is etched selectively by employing an NH4OH group etching liquid at a predetermined ratio. One part of the wafer is etched, the surface is treated by a H2SO4 group etching liquid, and a clean and smooth surface is shaped onto the stopping layer 6. The GaAlAs layers are removed, and the clean and smooth surface is formed.

Inventors

• 👤 Akio Yoshikawa
• 👤 昭男 吉川
• 👤 Masanori Hirose
• 👤 広瀬　正則
• 👤 Takashi Sugino
• 👤 隆 杉野

Bibliographic Details