Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To manufacture a high-quality recrystallized film whose orientation is suitably controlled by a method wherein an insulating film is formed on a substrate, an opening is provided in its part, a single crystalline semiconductor layer is embedded in the opening, and a polycrystalline semiconductor film is formed on the insulating film and recrystallized. CONSTITUTION:An SiO2 film is grown on a P-type Si substrate 1 in water vapor with thermal oxidation for specified time. Then, an opening section reaching the substrate is formed with photolithography and reactive ion-etching with CF4 and H2 as etchant. A single crystalline Si layer is formed within the opening with selective epitaxial growth. After that, a poly-Si film 3 is deposited with depression CVD method which thermally decomposites SiH4 gas. A substrate structure is obtained with photolithography and plasma etching with CF4 and O2 as etchant. Then, the substrate is annealed with CW-AR laser to recrystallize the film 3.

Inventors

• 👤 Masahiro Susa
• 👤 匡裕 須佐
• 👤 Eiji Fujii
• 👤 英治 藤井
• 👤 Yoshimitsu Hiroshima
• 👤 広島　義光

Bibliographic Details