Semiconductor device and manufacture thereof

Abstract

Abstract PURPOSE:To provide a memory structure using a trench type capacitor and having a large alpha-ray withstanding amount, by burying sequentially the trench inside having an insulating film covered, with a first conductive layer, a gate insulating film and a second conductive layer to form a capacitor. CONSTITUTION:A capacitor is constituted by burying sequentially the trench whose inside wall is being covered with an insulating film 2 of SiO2, with a first conductive layer 3, a gate insulating film 4 and a second conductive layer 5. The first conductive layer contacting the insulating film on the inside wall of the trench is extended to the semiconductor surface positioned on the trench peripheral section, and is connected to the source-drain regions 7, 8 of a transfer MOS field effect transistor formed on the substrate surface, constituting a MOS dynamic memory cell. Thus, a memory structure having a large electrostatic capacitance and a large alpha-ray withstanding amount can be provided without using a special process.

Inventors

• 👤 Takashi Azuma
• 👤 吾妻　孝

Bibliographic Details