Longitudinal semiconductor device and manufacture thereof

Abstract

Abstract PURPOSE:To increase mutual conductance, by forming a recess in the main surface of a semiconductor substrate, forming a first gate electrode on the main surface, forming a second electrode on the side surface of the recess, thereby increasing the width of a channel. CONSTITUTION:A gate insulating oxide film 5a is formed on an n-type epitaxial layer 2, in which a recess is formed. A first polycrystalline silicon film pattern 6a is formed on the surface of the recess of the layer 2 on the film 5a. A second polycrystalline silicon film pattern 6b is formed on the main surface of the layer 2. A first p-type semiconductor layer 4 is formed at a position, which is partially overlapped with the patterns 6a and 6b in the layer 2. A second n<+> type semiconductor layer 8 is formed at a position, which is partially overlapped with the patterns 6a and 6b on the surface of the layer 4. A second insulating film 5d is formed so as to cover the patterns 6a and 6b. A source Al electrode 9, which is ohmic-contacted with the layers 4 and 8, is formed on the film 5d.

Inventors

• 👤 Yoshitaka Sasaki
• 👤 芳高 佐々木

Bibliographic Details